Resistive switching characteristics of novel Al-inserted resistive random access memory (RRAM)

2010 IEEE Nanotechnology Materials and Devices Conference, NMDC2010

Volumn , Issue , 2010, Pages 356-359

  Ryoo, Kyung Chang ^a   Oh, Jeong Hoon ^a   Jung, Sung Hun ^a   Park, Byung Gook ^a  

^a Seoul National University   (South Korea)

Author keywords

AlO; NiO; Reset Current; RRAM; Unipolar switching

Indexed keywords

ALO; NIO; RESET CURRENTS; RRAM; UNIPOLAR SWITCHING;

ALUMINUM; NANOTECHNOLOGY; OXYGEN; RANDOM ACCESS STORAGE; SWITCHING SYSTEMS;

SWITCHING;

EID: 78651512447     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NMDC.2010.5652485     Document Type: Conference Paper

References (17)

1. I. Baek et al., "Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses" in IEEE Int. Electron Devices Meeting (IEDM) Tech. Dig., pp. 587-590, 2004.J. Clerk Maxwell, A Treatise on Electricity and Magnetism, 3rd ed., vol. 2. Oxford: Clarendon, 1892, pp.68-73.
2. S. Seo et al., "Conductivity switching characteristics and reset current in NiO films" in Appl. Phys. Lett., vol. 86, 093509, 2005.K. Elissa, "Title of paper if known," unpublished.
3. M. Lee et al., "Comparative structural and electrical analysis of NiO and Ti doped NiO as materials for resistance random access memory" in Appl. Phys. Lett., vol. 103, 013706, 2008.
4. K. Ryoo et al., "Irregular resistive switching characteristics and its mechanism based on NiO unipolar switching resistive random access memory (RRAM) " in Silicon Nanoelectronics Workshop., pp. 63-64, 2010
5. Russo et al., "Filament conduction and reset mechanism in NiO-based resistive-rwitching memory (RRAM) Devices" in IEEE Transactions on Electron Devices (TED)., vol.56. pp. 186-192, 2009
6. K. Ryoo et al., "Relationships of resistive switching parameters of resistive random access memory (RRAM) for high density and low power application" in IEICE., pp. 63-64, 2010
7. D. Kim et al., "Electrical observations of filamentary conductions for the resistive memeory switching in NiO films" in Appl. Phys. Lett., vol. 88, no.20, p. 202102, 2006
8. I. Baek et al., "Multi-layer cross-point binary oxide resisitive memory(OxRAM) for post-NAND storage application" in IEEE Int. Electron Devices Meeting (IEDM) Tech. Dig., pp. 750-753, 2005.
9. D. Lee et al., "Excellent uniformity and reproducible resistance switching characteristics of doped binary metal oxides for non-volatile resistive memory applications" in IEEE Int. Electron Devices Meeting (IEDM) Tech. Dig., pp. 587-590, 2004.
10. S. Lee et al., "Predictability of reset switching voltages in unipolar resistance switching" in Appl. Phys. Lett., vol. 94, 173504, 2009.
11. Russo et al., "Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar resistive-switching memory (RRAM) devices" in IEEE Transactions on Electron Devices (TED)., vol.56. pp. 193-200, 2009
12. Chen et al., "Highly uniform bipolar resistive switching with Al2O3 buffer layer in robust NbAlO-based RRAM" in IEEE Electron Device Letters (EDL)., vol.31, no.4, pp. 356-358, 2010
13. D. Ielmini et al., "Resistance transition in metal ooxides induced by electronic threshold switching" in Appl. Phys. Lett., vol. 94, no.6, p. 063511, 2009
14. C. Cheng et al., "Novel ultra-low power RRAM with good endurance and retention " in IEEE Sym. on VLSI Tech., Dig., pp. 85-86, 2010
15. Y.Sakotsubo et al., "A new approach for improving operation margin of unipolar ReRAM using local minimum of reset voltage " in IEEE Sym. on VLSI Tech., Dig., pp. 87-88, 2010
16. M.Wang et al., "A novel CuxSiyO resistive memory in logic technology with excellent data retention and resistiance distribution for embedded applications " in IEEE Sym. on VLSI Tech., Dig., pp. 89-90, 2010
17. Waser, R et al,. "Nanoionics-based resistive switching memoris" in Nat. Mater. (2007) 6, 833