Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Applied Physics Letters

Volumn 101, Issue 21, 2012, Pages

  Rudenko, Tamara ^a   Nazarov, Alexey ^a   Ferain, Isabelle ^b   Das, Samaresh ^b   Yu, Ran ^b   Barraud, Sylvain ^c   Razavi, Pedram ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b UNIVERSITY COLLEGE CORK   (Ireland)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SILICON; DOPING CONCENTRATION; EFFECTIVE ELECTRON MOBILITY; HEAVILY DOPED; JUNCTIONLESS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; METAL-OXIDE-SEMICONDUCTOR TRANSISTOR; MOBILITY ENHANCEMENT; NANOWIRE DEVICES; SILICON ON INSULATOR; SILICON THICKNESS;

CARRIER CONCENTRATION; ELECTRON MOBILITY; MOSFET DEVICES; NANOWIRES; SILICON;

SEMICONDUCTOR DOPING;

EID: 84870048720     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4767353     Document Type: Article

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