On the MOSFET threshold voltage extraction by transconductance and transconductance-to-current ratio change methods: Part I-Effect of gate-voltage-dependent mobility

IEEE Transactions on Electron Devices

Volumn 58, Issue 12, 2011, Pages 4172-4179

  Rudenko, Tamara ^a   Kilchytska, Valeriya ^b   Arshad, Mohd Khairuddin Md ^b,c   Raskin, Jean Pierre ^b   Nazarov, Alexey ^a   Flandre, Denis ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^c UNIVERSITY MALAYSIA PERLIS   (Malaysia)

Author keywords

Mobility; MOSFET threshold voltage extraction; transconductance change method; transconductance to current ratio change method; unified charge control model (UCCM)

Indexed keywords

ANALYTICAL EXPRESSIONS; ANALYTICAL MODELING; CHARGE CONTROL MODEL; CURRENT RATIOS; DRAIN VOLTAGE; EXPERIMENTAL DATA; FINFETS; GATE VOLTAGES; HIGH-K GATE DIELECTRICS; MOBILITY VARIATION; MOS-FET; MOSFETS; SECOND DERIVATIVES; SILICON-ON-INSULATORS; SOI-MOSFETS; THRESHOLD VOLTAGE EXTRACTION; TRANSCONDUCTANCE-TO-CURRENT RATIO; TRANSCONDUCTANCE-TO-CURRENT RATIO CHANGE METHOD; ULTRA-THIN; ULTRA-THIN-BODY;

GATE DIELECTRICS; MOSFET DEVICES; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

CARRIER MOBILITY;

EID: 82155166232     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2168226     Document Type: Article

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