Mobility and screening effect in heavily doped accumulation-mode metal-oxide-semiconductor field-effect transistors

Applied Physics Letters

Volumn 101, Issue 7, 2012, Pages

  Goto, Ken Ichi ^a   Yu, Tsung Hsing ^a   Wu, Jeff ^a   Diaz, Carlos H ^a   Colinge, J P ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACCUMULATION CHANNELS; ACCUMULATION MODES; BULK MATERIALS; BULK MOBILITY; CHANNEL MOBILITY; COULOMB SCATTERING; ELECTROSTATIC SCREENING; HEAVILY DOPED; HIGH CONCENTRATION; MAJORITY CARRIERS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOBILITY VALUE; N-CHANNEL; SCREENING EFFECT;

PHYSICAL PROPERTIES; PHYSICS;

MOSFET DEVICES;

EID: 84865431088     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4745604     Document Type: Article

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