The infrared vibrational absorption spectrum of the Si-X defect present in heavily Si doped GaAs

Journal of Applied Physics

Volumn 82, Issue 1, 1997, Pages 137-141

  Ashwin, M J ^a   Newman, R C ^a   Muraki, K ^b  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000457299     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365791     Document Type: Article

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