Investigation on nitrogen-doped Ge2Sb2Te5 material for phase-change memory application

Solid-State Electronics

Volumn 79, Issue , 2013, Pages 138-141

  Yao, Dongning ^a   Zhou, Xilin ^a,b   Wu, Liangcai ^a   Song, Zhitang ^a   Cheng, Limin ^a   Rao, Feng ^a   Liu, Bo ^a   Feng, Songlin ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

Electrical switching; Ge2Sb2Te5; Nitrogen doping; Phase change material

Indexed keywords

COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; CRYSTALLINE STATE; CUBIC STRUCTURE; CURRENT VOLTAGE; ELECTRICAL SWITCHING; GRAIN SIZE; HEXAGONAL PHASE; MEMORY APPLICATIONS; NITROGEN ADDITIONS; NITROGEN ATOM; NITROGEN-DOPED; NITROGEN-DOPING; PHASE CHANGES; RESET VOLTAGE; RESISTANCE RATIO; SHEET RESISTANCE MEASUREMENTS; SWEEPING PROCESS; X-RAY DIFFRACTION METHOD; X-RAY DIFFRACTION TESTS;

CRYSTALLINE MATERIALS; NITROGEN; PHASE CHANGE MATERIALS; PHASE CHANGE MEMORY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; X RAY DIFFRACTION;

GERMANIUM;

EID: 84869495368     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2012.07.020     Document Type: Article

References (20)

1. M. Wuttig Phase-change materials - towards a universal memory? Nat Mater 4 2005 265 266
2. J. Tomforde Thin films of Ge-Sb-Te-based phase change materials: microstructure and in situ transformation Chem Mater 23 2011 3871 3878
3. H.F. Hamann Ultra-high-density phase-change storage and memory Nat Mater 5 2006 383 387
4. A.L. Lacaita, and D.J. Wouters Phase-change memories Phys Stat Sol - Appl Mater Sci 205 2008 2281 2297
5. I. Friedrich Structural transformations of Ge(2)Sb(2)Te(5) films studied by electrical resistance measurements J Appl Phys 87 2000 4130 4134
6. T.P.L. Pedersen Mechanical stresses upon crystallization in phase change materials Appl Phys Lett 79 2001 3597 3599
7. Y. Yin Electrical properties of phase change and channel current control in ultrathin phase-change channel transistor memory by annealing Jpn J Appl Phys Part 1 - Regular Pap Brief Commun Rev Pap 45 2006 3238 3242
8. Y. Yin Finite element analysis of dependence of programming characteristics of phase-change memory on material properties of chalcogenides Jpn J Appl Phys Part 1 - Regular Pap Brief Commun Rev Pap 45 2006 8600 8603
9. 5 phase change film Thin Solid Films 478 2005 49 55
10. M.H. Jang Phase change behavior in oxygen-incorporated Ge(2)Sb(2)Te(5) films Appl Phys Lett 95 2009
11. 5 films used for phase-change memory Chin Phys Lett 22 2005 2929 2932
12. S.M. Jeong Influence of silicon doping on the properties of sputtered Ge(2)Sb(2)Te(5) thin film Jpn J Appl Phys 48 2009
13. R. Kojima Nitrogen doping effect on phase change optical disks Jpn J Appl Phys Part 1 - Regular Pap Short Notes Rev Pap 37 1998 2098 2103
14. 5 Appl Phys Lett 89 2006
15. 5 thin films (x = 0, 0.2) for phase change memory J Electrochem Soc 154 2007 H867 H870
16. F. Rao Nano composite Si(2)Sb(2)Te film for phase change memory Thin Solid Films 519 2011 5684 5688
17. 5 Appl Phys Lett 91 2007
18. 5 films Appl Phys Lett 90 2007
19. F. Rao Phase change memory cell using tungsten trioxide bottom heating layer Appl Phys Lett 92 2008
20. F. Rao Si-Sb-Te materials for phase change memory applications Nanotechnology 22 2011