Nano composite Si2Sb2Te film for phase change memory

Thin Solid Films

Volumn 519, Issue 16, 2011, Pages 5684-5688

  Rao, Feng ^a   Ren, Kun ^a   Gu, Yifeng ^a   Song, Zhitang ^a   Wu, Liangcai ^a   Zhou, Xilin ^a   Liu, Bo ^a   Feng, Songlin ^a   Chen, Bomy ^b  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b SILICON STORAGE TECHNOLOGY INC   (United States)

Author keywords

Nano composite; Phase change memory; Si2Sb2Te

Indexed keywords

AMORPHOUS PHASE; AMORPHOUS SI; CRYSTALLINE SB; DATA RETENTION; ELECTRICAL MEASUREMENT; GRAIN DISTRIBUTION; GRAIN SIZE; LARGE CRYSTAL; LOW-POWER CONSUMPTION; NANO-COMPOSITE STRUCTURE; NANOCOMPOSITE MATERIALS; OPERATION STABILITY; PHASE CHANGE MEMORY CELLS; PHASE SEGREGATIONS; SI CONTENT; SI-DOPING; SI2SB2TE; THERMAL STABILITY;

AMORPHOUS FILMS; AMORPHOUS SILICON; GERMANIUM; GRAIN GROWTH; GRAIN SIZE AND SHAPE; NANOCOMPOSITE FILMS; NANOCOMPOSITES; PHASE SEPARATION; SEMICONDUCTOR DOPING; SILICON; STRUCTURE (COMPOSITION); TELLURIUM; THERMODYNAMIC STABILITY;

PHASE CHANGE MEMORY;

EID: 79958015715     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.03.015     Document Type: Article

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