Characteristics of Sn-doped Ge2Sb2Te5 films used for phase-change memory

Chinese Physics Letters

Volumn 22, Issue 11, 2005, Pages 2929-2932

  Xu, Cheng ^a,b   Liu, Bo ^a   Song, Zhi Tang ^a   Feng, Song Lin ^a   Chen, Bomy ^c  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c SILICON STORAGE TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANTIMONY COMPOUNDS; CRYSTALLINE MATERIALS; DIFFERENTIAL SCANNING CALORIMETRY; GERMANIUM ALLOYS; GERMANIUM COMPOUNDS; MAGNETRON SPUTTERING; PHASE CHANGE MEMORY; SEMICONDUCTOR DOPING; SHEET RESISTANCE; SILICON COMPOUNDS; TELLURIUM COMPOUNDS; TIN COMPOUNDS; X RAY DIFFRACTION;

CRYSTALLINE PHASE TRANSITION; CRYSTALLIZATION TEMPERATURE; PHASE-CHANGE MEMORY; R.F. MAGNETRON SPUTTERING; RF-MAGNETRON SPUTTERING; SHEET RESISTANCE MEASUREMENTS; SN-DOPED; SWITCHING CURRENTS; THE DIFFERENTIAL SCANNING CALORIMETER (DSC); THIN-FILMS;

THIN FILMS;

EID: 27644463112     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/22/11/056     Document Type: Article

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