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Volumn 37, Issue 4, 2008, Pages 540-544

Memory switching characteristics in amorphous Ga2Se3 films

Author keywords

Ga2Se3 films; Switching phenomenon

Indexed keywords

AMORPHOUS MATERIALS; FILM THICKNESS; GALLIUM COMPOUNDS; SWITCHING; THERMAL EVAPORATION;

EID: 39849104141     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-008-0389-4     Document Type: Article
Times cited : (10)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.