Polar charges induced electric hysteresis of ZnO nano/microwire for fast data storage

Nano Letters

Volumn 11, Issue 7, 2011, Pages 2829-2834

  Song, Jinhui ^a   Zhang, Yan ^a   Xu, Chen ^a   Wu, Wenzuo ^a   Wang, Zhong Lin ^a  

^a Georgia Institute of Technology   (United States)

Author keywords

memory; Memristor; polar surface; Schottky barrier; ZnO nanowire

Indexed keywords

MEMORY; MEMRISTOR; POLAR SURFACES; SCHOTTKY BARRIERS; ZNO NANOWIRES;

CRYSTAL STRUCTURE; DATA STORAGE EQUIPMENT; ELECTRIC WIRE; MEMRISTORS; NANOWIRES; PASSIVE FILTERS; POWER QUALITY; RESISTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS;

ZINC OXIDE;

GOLD; NANOWIRE; SILVER; ZINC OXIDE;

ARTICLE; CHEMISTRY; ELECTRON; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTY;

ELECTRONS; GOLD; NANOTECHNOLOGY; NANOWIRES; PARTICLE SIZE; SILVER; SURFACE PROPERTIES; ZINC OXIDE;

EID: 79960214472     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl2011966     Document Type: Article

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