Transition from the type-II broken-gap heterojunction to the staggered one in the GaInAsSb/InAs(GaSb) system

Semiconductors

Volumn 41, Issue 2, 2007, Pages 161-166

  Mikhailova, M P ^a   Moiseev, K D ^a   Voronina, T I ^a   Lagunova, T S ^a   Yakovlev, Yu P ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33847270214     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782607020091     Document Type: Article

References (35)

1. A. I. Nadezhdinsky and A. M. Prokhorov, Proc. SPIE 1724, 2 (1992).
2. A. N. Baranov, B. E. Dzhurtanov, A. N. Imenkov, et al., Pis'ma Zh. Tekh. Fiz. 12, 664 (1986)
3. [Sov. Tech. Phys. Lett. 12, 275 (1986)].
4. J. C. DeWinter, M. A. Pollak, A. K. Srivastava, and J. L. Zyskind, J. Electron. Mater. 14, 729 (1995).
5. T. S. Hasenberg, R. H. Miles, A. R. Kost, and L. West, IEEE J. Quantum Electron. 33, 1403 (1997).
6. A. N. Baranov, N. Bertu, J. Cuminal, et al., Appl. Phys. Lett. 71, 735 (1997).
7. K. D. Moiseev, O. G. Ershov, M. P. Mikhaǐlova, et al., Pis'ma Zh. Tekh. Fiz. 23 (4), 55 (1997)
8. [Tech. Phys. Lett. 23, 151 (1997)].
9. A. A. Andaspaeva, A. N. Baranov, A. A. Guseǐnov, et al., Pis'ma Zh. Tekh. Fiz. 15 (18), 71 (1989)
10. [Sov. Tech. Phys. Lett. 15, 734 (1989)].
11. N. D. Stoyanov, B. E. Zhurtanov, A. P. Astakhova, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 37, 996 (2003)
12. [Semiconductors 37, 971 (2003)].
13. N. D. Stoyanov, M. P. Mikhaǐlova, O. V. Andreǐchuk, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 35, 467 (2001)
14. [Semiconductors 35, 453 (2001)].
15. V. I. Perel', S. A. Tarasenko, I. N. Yassievich, et al., Phys. Rev. B 67, 201304 (2003).
16. M. P. Mikhailova and A. N. Titkov, Semicond. Sci. Technol. 9, 1279 (1994).
17. C. A. Sai-Halasz, L. Esaki, and W. Harrison, Phys. Rev. B 18, 2812 (1978).
18. H. Kroemer and G. Griffits, IEEE Electron Device Lett. 4, 20 (1983).
19. K. D. Moiseev, A. A. Sitnikova, N. N. Faleev, and Yu. P. Yakovlev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 1438 (2000)
20. [Semiconductors 34, 1381 (2000)].
21. T. I. Voronina, T. S. Lagunova, M. P. Mikhaǐlova, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 30, 985 (1996)
22. [Semiconductors 30, 523 (1996)].
23. M. P. Mikhailova, K. D. Moiseev, T. I. Voronina, et al., in Proceedings of 14th International Symposium on Nanostructures: Physics and Technology (St. Petersburg, Russia, 2006), p. 180.
24. C. G. Van der Walle, Phys. Rev. B 39, 1871 (1987).
25. Handbook of Electronic Materials, Ed. by M. Neuberger (IFI/Plemun, New York, 1971), Vol. 2, p. 258.
26. K. D. Moiseev, A. A. Toropov, Ya. V. Terent'ev, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 1432 (2000)
27. [Semiconductors 34, 1376 (2000)].
28. K. D. Moiseev, A. Krier, and Yu. P. Yakovlev, J. Electron. Mater. 33, 867 (2004).
29. M. A. Afrailov, A. N. Baranov, A. P. Dmitriev, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 24, 1397 (1990)
30. [Sov. Phys. Semicond. 24, 876 (1990)].
31. F. Karouta, H. Mani, J. Bhan, et al., Rev. Phys. Appl. 22, 145 (1987).
32. A. N. Baranov, A. M. Litvak, K. D. Moiseev, et al., Zh. Prikl. Khim. (St. Petersburg) 67, 1951 (1994).
33. R. Magri, A. Zunger, and H. Kroemer, J. Appl. Phys. 98, 043701 (2005).
34. S. S. Kizhaev, S. S. Molchanov, N. V. Zotova, et al., Pis'ma Zh. Tekh. Fiz. 27 (22), 66 (2001)
35. [Tech. Phys. Lett. 27, 964 (2001)].