InGaN/Si heterojunction tandem solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2008, Pages

  Ager, J W ^a   Reichertz, L A ^a   Yu, K M ^a   Schaff, W J ^b   Williamson, T L ^c   Hoffbauer, M A ^c   Haegel, N M ^d   Walukiewicz, W ^a,e  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b School of Operations Research and Industrial Engineering   (United States)

^c LOS ALAMOS NATIONAL LABORATORY   (United States)

^d NAVAL POSTGRADUATE SCHOOL   (United States)

^e RoseStreet Labs Energy   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN BUFFER LAYERS; DEPOSITION METHODS; JUNCTION PROPERTIES; LOW RESISTANCE; MULTI-JUNCTION CELLS; OHMIC BEHAVIOR; SINGLE JUNCTION; TANDEM SOLAR CELLS;

ALUMINUM NITRIDE; MOLECULAR BEAM EPITAXY; NITROGEN; SILICON; SOLAR CELLS; TUNNEL JUNCTIONS;

HETEROJUNCTIONS;

EID: 84879736687     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2008.4922663     Document Type: Conference Paper

References (12)

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