Comparative study of SiO 2, Al 2O 3, and BeO ultrathin interfacial barrier layers in Si metal-oxide-semiconductor devices

Active and Passive Electronic Components

Volumn 2012, Issue , 2012, Pages

  Yum, J H ^a,b   Oh, J ^c   Hudnall, Todd W ^d   Bielawski, C W ^e   Bersuker, G ^b   Banerjee, S K ^a  

^a The University of Texas at Austin   (United States)

^b SEMATECH   (United States)

^c Yonsei University   (South Korea)

^d Texas State University   (United States)

^e UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPARATIVE STUDIES; DRIVE CURRENTS; EFFECTIVE ELECTRON MOBILITY; ELECTRICAL CHARACTERISTIC; EQUIVALENT OXIDE THICKNESS; FLAT-BAND VOLTAGE SHIFT; GATE STACKS; INTERFACE CHARGE; INTERFACIAL BARRIERS; METAL OXIDE SEMICONDUCTOR; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOSFETS; N-CHANNEL; PHYSICAL CHARACTERISTICS; RELIABILITY CHARACTERISTICS; SI SUBSTRATES; STRESS-INDUCED; STRESS-INDUCED LEAKAGE CURRENT; SUBTHRESHOLD SWING; ULTRA-THIN;

ATOMIC LAYER DEPOSITION; CHARGE COUPLED DEVICES; ELECTRIC FIELD EFFECTS; ELECTRON MOBILITY; GATE DIELECTRICS; HAFNIUM OXIDES; INVERSION LAYERS; MOS DEVICES; MOSFET DEVICES; SILICON;

SEMICONDUCTING SILICON;

EID: 84869015514     PISSN: 08827516     EISSN: 15635031     Source Type: Journal    
DOI: 10.1155/2012/359580     Document Type: Article

References (17)

1. Hubbard K. J., Schlom D. G., Thermodynamic stability of binary oxides in contact with silicon. Journal of Materials Research 1996 11 11 2757 2776 2-s2.0-0030291621 (Pubitemid 126531137)
2. 3 gate stacks with TiN electrodes. Proceedings of the Symposium on VLSI Technology Digest of Technical Papers June 2002 76 77 2-s2.0-3042704476
3. 2 as high-k gate dielectrics with polysilicon gate electrode. IEEE International Electron Devices Meeting (IEDM '01) December 2001 Washington, DC, USA 455 458 2-s2.0-0036346279 (Pubitemid 34170690)
4. 3 gate dielectric. Proceedings of the Symposium on VLSI Technology Digest of Technical Papers June 2002 188 189 2-s2.0-0036045318
5. Fischetti M. V., Neumayer D. A., Cartier E. A., Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high- κ insulator: the role of remote phonon scattering. Journal of Applied Physics 2001 90 9 4587 4608 2-s2.0-0035504954 10.1063/1.1405826
6. Yum J. H., Akyol T., Lei M., Hudnall T., Bersuker G., Downer M., Bielawski C. W., Lee J. C., Banerjee S. K., Atomic layer deposited beryllium oxide: effective passivation layer for III-V metal/oxide/semiconductor devices. Journal of Applied Physics 2011 109 6 2-s2.0-79953665183 10.1063/1.3553872 064101
7. Yum J. H., Akyol T., Lei M., Ferrer D. A., Hudnall T., Bersuker G., Downer M., Bielawski C. W., Lee J. C., Banerjee S. K., A study of highly crystalline novel beryllium oxide film using atomic layer deposition. Journal of Crystal Growth 2011 334 126 133 10.1016/j.jcrysgro.2011.08.040
8. Yum J. H., Akyol T., Lei M., Ferrer D. A., Hudnall T. W., Downer M., Bielawski C. W., Bersuker G., Lee J. C., Banerjee S. K., Inversion type InP metal oxide semiconductor field effect transistor using novel atomic layer deposited BeO gate dielectric. Applied Physics Letters 2011 99 3 2-s2.0-79960751564 10.1063/1.3614446 033502
9. 3 deposited as an interface passivation layer on GaAs MOS devices. Journal of Vacuum Science and Technology A 2011 29 6 061501
10. Yum J. H., Akyol T., Lei M., Park K. W., Hudnall W. Todd., Downer M., Bielawski C. W., Bersuker G., Yu E. T., Price J., Lee J. C., Banerjee S. K., Epitaxial ALD BeO: efficient oxygen diffusion barrier for EOT scaling and reliability improvement. Electron Device Letters 2011 58 12 4384 4392
11. Hummel R. E., Electronic Properties of Materials 2001 3rd chapter 21
12. 2 atomic layer deposition. Journal of Physical Chemistry C 2008 112 12 4573 4580 2-s2.0-47049095504 10.1021/jp076866+
13. Gaskell D. R., Introduction to the Thermodynamics of Materials 2008 5th chapter 4
14. Yum J. H., Bersuker G., Oh J., Banerjee S. K., Theoretical approach evaluating beryllium oxide as A gate dielectric in the view points of electromagnetics and thermal stability. Applied Physics Letters 2012 100 5 3 053501
15. Streetman B. G., Banerjee S. K., Solid State Electronic Devices 2005 6th
16. 2 metal-oxide-semiconductor field effect transistor. Applied Physics Letters 2004 85 7 1286 1288 2-s2.0-4444288779 10.1063/1.1773370
17. Zhao Y., Wang G. C., Lu T. M., Characterization of Amorphous and Crystalline Rough Surface: Principles and Applications 2000 chapter 6, 7, and 16