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Volumn 334, Issue 1, 2011, Pages 126-133
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A study of highly crystalline novel beryllium oxide film using atomic layer deposition
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Author keywords
A1. Crystal structure; B1. Oxides; B2. Dielectric materials
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Indexed keywords
ALD GROWTH;
BOND DISTANCE;
CRYSTALLINITIES;
DEVICE APPLICATION;
GAAS SUBSTRATES;
GAAS(1 0 0);
HIGH ENERGY;
HIGH THERMAL STABILITY;
HIGH-K GATE DIELECTRICS;
INTERFACE PASSIVATION;
PHYSICAL CHARACTERISTICS;
SI(1 0 0);
WURTZITE STRUCTURE;
XRD;
ATOMIC LAYER DEPOSITION;
ATOMS;
BERYLLIUM;
CRYSTAL ATOMIC STRUCTURE;
CRYSTALLINE MATERIALS;
GALLIUM ARSENIDE;
GATE DIELECTRICS;
GERMANIUM;
INTERFACES (MATERIALS);
OXIDE FILMS;
PASSIVATION;
SEMICONDUCTING GALLIUM;
SUBSTRATES;
ZINC SULFIDE;
DIELECTRIC MATERIALS;
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EID: 80053335489
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2011.08.040 Document Type: Article |
Times cited : (33)
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References (16)
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