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Volumn 334, Issue 1, 2011, Pages 126-133

A study of highly crystalline novel beryllium oxide film using atomic layer deposition

Author keywords

A1. Crystal structure; B1. Oxides; B2. Dielectric materials

Indexed keywords

ALD GROWTH; BOND DISTANCE; CRYSTALLINITIES; DEVICE APPLICATION; GAAS SUBSTRATES; GAAS(1 0 0); HIGH ENERGY; HIGH THERMAL STABILITY; HIGH-K GATE DIELECTRICS; INTERFACE PASSIVATION; PHYSICAL CHARACTERISTICS; SI(1 0 0); WURTZITE STRUCTURE; XRD;

EID: 80053335489     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.08.040     Document Type: Article
Times cited : (33)

References (16)
  • 14
    • 80053295252 scopus 로고    scopus 로고
    • Cambridge Nanotech ALD, 〈http://www.cambridgenanotech.com/products/ savannah.php〉.
    • Cambridge Nanotech ALD


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.