SCOPUS 정보 검색 플랫폼

Volumn 99, Issue 3, 2011, Pages

Inversion type InP metal oxide semiconductor field effect transistor using novel atomic layer deposited BeO gate dielectric

(10) Yum, J H a,b Akyol, T a Lei, M c Ferrer, D A a Hudnall, Todd W e Downer, M c Bielawski, C W d Bersuker, G b Lee, J C a Banerjee, S K a

a The University of Texas at Austin (United States)

b SEMATECH (United States)

c UNIVERSITY OF TEXAS AT AUSTIN (United States)

d University of Texas at Austin (United States)

e Texas State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; DEVICE FABRICATIONS; DRIVE CURRENTS; EFFECTIVE ELECTRON MOBILITY; GATE STACKS; GATE-LAST; HIGH QUALITY; INP; INP SUBSTRATES; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOSFETS; N-CHANNEL; POTENTIAL SOLUTIONS; SUBTHRESHOLD SWING; X RAY PHOTOEMISSION SPECTROSCOPY;

BERYLLIUM; DIELECTRIC MATERIALS; ELECTRON MOBILITY; EMISSION SPECTROSCOPY; GATE DIELECTRICS; GATES (TRANSISTOR); INDIUM PHOSPHIDE; METALLIC COMPOUNDS; MOS DEVICES; SEMICONDUCTING INDIUM; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY;

MOSFET DEVICES;

EID: 79960751564 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3614446 Document Type: Article

Times cited : (15)

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