Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices

Journal of Applied Physics

Volumn 109, Issue 6, 2011, Pages

  Yum, J H ^a,b   Akyol, T ^a   Lei, M ^c   Hudnall, T ^d   Bersuker, G ^b   Downer, M ^c   Bielawski, C W ^d   Lee, J C ^a   Banerjee, S K ^a  

^a The University of Texas at Austin   (United States)

^b SEMATECH   (United States)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^d The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; DIELECTRIC CHARACTERISTICS; EFFECTIVE DIFFUSION; EFFECTIVE OXIDE THICKNESS; ENERGY BANDGAPS; FREQUENCY DISPERSION; GAAS SUBSTRATES; HIGH THERMAL STABILITY; INTERFACE DEFECTS; INTERFACIAL PASSIVATION LAYERS; INTRINSIC PROPERTY; PASSIVATION LAYER; PHYSICAL CHARACTERISTICS; SELF-CLEANING EFFECTS; STRUCTURAL DEFECT;

BERYLLIUM; DEFECT DENSITY; DEFECTS; GALLIUM ALLOYS;

PASSIVATION;

EID: 79953665183     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3553872     Document Type: Article

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