Design rules of (Mg,Zn)O-based thin-film transistors with high- κ WO 3 dielectric gates

Applied Physics Letters

Volumn 101, Issue 18, 2012, Pages

  Lorenz, M ^a   Reinhardt, A ^a   Von Wenckstern, H ^a   Grundmann, M ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LAYERS; CHANNEL MATERIALS; DESIGN AND OPTIMIZATION; DESIGN RULES; DIELECTRIC GATES; DIELECTRIC THICKNESS; GATE METALS; METAL INSULATORS; NORMALLY OFF; OFF-CURRENT; SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; SUBTHRESHOLD SLOPE;

MISFET DEVICES; OPTIMIZATION; PLATINUM; THIN FILM TRANSISTORS;

ZINC;

EID: 84868660699     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4764559     Document Type: Article

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