Investigating minority carrier trapping in n-type Cz silicon by transient photoconductance measurements

Journal of Applied Physics

Volumn 111, Issue 5, 2012, Pages

  Hu, Yu ^a   Schn, Hendrik ^b   Nielsen, Øyvind ^b   Johannes Øvrelid, Eivind ^c   Arnberg, Lars ^a  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^b Norsun AS   (Norway)

^c SINTEF   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING EXPERIMENTS; CZ SILICON; DE-TRAPPING; DEEP TRAPS; FITTING RESULTS; INTERSTITIAL OXYGEN; LIFETIME MEASUREMENTS; MINORITY CARRIER; N TYPE SILICON; PHOTOCONDUCTANCE; QUASI-STEADY-STATE PHOTOCONDUCTANCE; RECOMBINATION CENTERS; THERMAL DONOR; TRAP DENSITY;

PHYSICAL PROPERTIES;

PHYSICS;

EID: 84858960613     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3689786     Document Type: Article

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