Preparation and electrical characterization of Au/n-Si (1 1 0) structure with PVA-nickel acetate composite film interfacial layer

Journal of Composite Materials

Volumn 46, Issue 22, 2012, Pages 2843-2850

  Tunc T ^a   Gokcen M ^b  

^a AKSARAY UNIVERSITY   (Turkey)

^b DUZCE UNIVERSITY   (Turkey)

Author keywords

Au PVA n Si; illumination effect; interface states; organic interfacial layer; series resistance

Indexed keywords

BARRIER HEIGHTS; CURRENT-VOLTAGE MEASUREMENTS; ELECTRICAL CHARACTERIZATION; ELECTRICAL PARAMETER; IDEALITY FACTORS; ILLUMINATION EFFECT; ILLUMINATION INTENSITY; INHOMOGENEITIES; INTERFACE STATE DENSITY; INTERFACIAL LAYER; MICRODROPS; N TYPE SILICON; NI-DOPED; OPTOELECTRONIC APPLICATIONS; PARTICULAR DISTRIBUTION; PHOTOVOLTAIC; ROOM TEMPERATURE; SCHOTTKY DIODES; SERIES RESISTANCES;

COMPOSITE FILMS; DIODES; ELECTRIC RESISTANCE; INTERFACE STATES; OPEN CIRCUIT VOLTAGE; ORGANOMETALLICS; PHOTOVOLTAIC EFFECTS; SCHOTTKY BARRIER DIODES; SILICON;

NICKEL;

EID: 84868328539     PISSN: 00219983     EISSN: 1530793X     Source Type: Journal    
DOI: 10.1177/0021998311433342     Document Type: Article

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