Illumination effect on I-V, C-V and G/w-V characteristics of AI-TiW-Pd 2Si/n-Si structures at room temperature

Surface and Interface Analysis

Volumn 42, Issue 6-7, 2010, Pages 807-811

  Uslu, H ^a   Dokme I ^a   Afandiyeva, I M ^b   Altindal, S ^a  

^a GAZI UNIVERSITY   (Turkey)

^b BAKU STATE UNIVERSITY   (Azerbaijan)

Author keywords

Al TiW Pd2Si n Si structures; Illumination effect on I V and C V characteristics; Interface states; Series resistance

Indexed keywords

BARRIER HEIGHTS; CAPACITANCE VOLTAGE; CURRENT VOLTAGE; ELECTRICAL PARAMETER; FORWARD BIAS; G-VALUES; I-V AND C-V CHARACTERISTICS; IDEALITY FACTORS; ILLUMINATION EFFECT; ILLUMINATION LEVELS; INTERFACE STATE; IV CHARACTERISTICS; LOW-HIGH; MAIN STRUCTURE; REVERSE BIAS; ROOM TEMPERATURE; SERIES RESISTANCES; ZERO-BIAS;

ALUMINUM; PALLADIUM; SILICON;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77954278075     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.3358     Document Type: Conference Paper

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