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Volumn 406, Issue 21, 2011, Pages 4119-4123
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Forward and reverse bias currentvoltage characteristics of Au/n-Si Schottky barrier diodes with and without SnO2 insulator layer
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Author keywords
Au n Si; Insulator layer effects; Interface states; IV characteristic; Series resistance
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Indexed keywords
BAND EDGE;
BARRIER HEIGHTS;
BIAS DEPENDENCE;
CURRENT VOLTAGE;
ELECTRICAL CHARACTERISTIC;
ELECTRICAL PARAMETER;
ENERGY DENSITY DISTRIBUTIONS;
EXPONENTIAL INCREASE;
FORWARD BIAS;
IDEALITY FACTORS;
INSULATOR LAYER;
INTERFACE STATE;
INTERFACE STATES;
INTERFACIAL INSULATOR LAYER;
IV CHARACTERISTICS;
REVERSE BIAS;
ROOM TEMPERATURE;
SERIES RESISTANCES;
ELECTRIC RESISTANCE;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON;
SCHOTTKY BARRIER DIODES;
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EID: 81155159760
PISSN: 09214526
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physb.2011.08.006 Document Type: Article |
Times cited : (51)
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References (20)
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