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Volumn 406, Issue 21, 2011, Pages 4119-4123

Forward and reverse bias currentvoltage characteristics of Au/n-Si Schottky barrier diodes with and without SnO2 insulator layer

Author keywords

Au n Si; Insulator layer effects; Interface states; IV characteristic; Series resistance

Indexed keywords

BAND EDGE; BARRIER HEIGHTS; BIAS DEPENDENCE; CURRENT VOLTAGE; ELECTRICAL CHARACTERISTIC; ELECTRICAL PARAMETER; ENERGY DENSITY DISTRIBUTIONS; EXPONENTIAL INCREASE; FORWARD BIAS; IDEALITY FACTORS; INSULATOR LAYER; INTERFACE STATE; INTERFACE STATES; INTERFACIAL INSULATOR LAYER; IV CHARACTERISTICS; REVERSE BIAS; ROOM TEMPERATURE; SERIES RESISTANCES;

EID: 81155159760     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2011.08.006     Document Type: Article
Times cited : (51)

References (20)
  • 20
    • 33751225080 scopus 로고    scopus 로고
    • Dökme Physica B 388 12 2007 10
    • (2007) Physica B , vol.388 , Issue.12 , pp. 10
    • Dökme1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.