Effect of ion bombardment on the a-Si:H based surface passivation of c -Si surfaces

Applied Physics Letters

Volumn 98, Issue 24, 2011, Pages

  Illiberi, A ^a   Kudlacek, P ^a   Smets, A H M ^b   Creatore, M ^a   Van De Sanden, M C M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; ELECTRON HOLE PAIRS; GENERATION RATE; ION FLUXES; ION KINETIC ENERGY; LINEARLY PROPORTIONAL; METASTABLE DEFECT; SI SURFACES; SURFACE PASSIVATION;

EXCITONS; IONS; PASSIVATION; SILICON;

ION BOMBARDMENT;

EID: 79960609817     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3601485     Document Type: Article

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