Mechanism of selective area growth of GaN nanorods by pulsed mode metalorganic chemical vapor deposition

Nanotechnology

Volumn 23, Issue 46, 2012, Pages

  Lin, Yen Ting ^a,b   Yeh, Ting Wei ^a,b   Daniel Dapkus, P ^a,b  

^a UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

^b University of Southern California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION/DESORPTION; GAN NANORODS; GROWTH BEHAVIOR; GROWTH MECHANISMS; KINETIC MODELS; PULSED MODE; PULSED SOURCE; SELECTIVE AREA GROWTH;

GALLIUM NITRIDE; NANORODS; VAPORS;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 84867977812     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/46/465601     Document Type: Article

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