Using seed particle composition to control structural and optical properties of GaN nanowires

Nanotechnology

Volumn 23, Issue 28, 2012, Pages

  Zhou, Xiang ^a   Chesin, Jordan ^a   Crawford, Samuel ^a   Gradečak, Silvija ^a  

^a Massachusetts Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BASAL PLANE STACKING FAULTS; BLUE-SHIFTED; COMPOUND SEMICONDUCTORS; DIRECT IMPACT; GALLIUM NITRIDE NANOWIRES; GAN NANOWIRES; GROWTH TIME; NEAR-BANDGAP EMISSION; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SEED PARTICLE; STRUCTURAL AND OPTICAL PROPERTIES; STRUCTURAL DEFECT;

METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOWIRES; OPTICAL PROPERTIES; SAPPHIRE; SEMICONDUCTOR GROWTH; STACKING FAULTS;

GALLIUM NITRIDE;

EID: 84862838830     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/28/285603     Document Type: Article

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