Zigzag and helical aln layer prepared by glancing angle deposition and its application as a buffer layer in a gan-based light-emitting diode

Journal of Nanomaterials

Volumn 2012, Issue , 2012, Pages

  Chen, Lung Chien ^a   Tien, Ching Ho ^a   Xuguang, Liu ^b   Bingshe, Xu ^b  

^a NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^b TAIYUAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN LAYERS; FORWARD CURRENTS; GAN BASED LED; GAN-BASED LIGHT-EMITTING DIODES; GLANCING ANGLE DEPOSITION; LIGHT OUTPUT POWER; RAY-TRACING METHOD; SAPPHIRE SUBSTRATES; THREE-DIMENSIONAL MODEL; TRACEPRO;

ALUMINUM NITRIDE; BUFFER LAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; NANORODS; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; THREE DIMENSIONAL;

LIGHT EMITTING DIODES;

EID: 84867868151     PISSN: 16874110     EISSN: 16874129     Source Type: Journal    
DOI: 10.1155/2012/409123     Document Type: Article

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