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Journal of Materials Science: Materials in Electronics

Volumn 19, Issue SUPPL. 1, 2008, Pages

Microstructure of α-plane (2110) GaN ELOG stripe patterns with different in-plane orientation

(6) Wernicke, Tim a Zeimer, Ute a Herms, Martin a Weyers, Markus a Kneissl, Michael a,b Irmer, Gert c

a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK (Germany)

b TECHNISCHE UNIVERSITÄT BERLIN (Germany)

c TU BERGAKADEMIE FREIBERG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BASAL PLANE STACKING FAULTS; CL MICROGRAPHS; CRYSTALLINE QUALITY; DEFECT REDUCTION; EFFICIENT EMISSION; EPITAXIAL LATERAL OVERGROWN; HIGH-DENSITY; IN-PLANE ORIENTATIONS; MASK OPENING; MICRO-RAMAN SPECTROSCOPY; NON-POLAR; PLANE SAPPHIRE; RAMAN MAPPING; STRIPE PATTERNS; THREADING DISLOCATIONS;

ARCHITECTURAL ACOUSTICS; CORUNDUM; DEFECT DENSITY; EMISSION SPECTROSCOPY; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; SEMICONDUCTING GALLIUM; STACKING FAULTS;

WINGS;

EID: 53649089460 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-008-9638-9 Document Type: Article

Times cited : (5)

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