Non-hydrolytic ester-elimination reaction and its application in solution-processed zinc tin oxide thin film transistors

Journal of Sol-Gel Science and Technology

Volumn 64, Issue 1, 2012, Pages 257-263

  Yoo, Young Bum ^a   Park, Jee Ho ^a   Song, Kie Moon ^b   Lee, Se Jong ^c   Baik, Hong Koo ^a  

^a Yonsei University   (South Korea)

^b Konkuk University   (South Korea)

^c Kyungsung University   (South Korea)

Author keywords

Ester elimination; Non hydrolytic sol gel; Thin film transistor; Zinc tin oxide

Indexed keywords

DRIVING FORCES; ELECTRONIC APPLICATION; ESTER-ELIMINATION REACTION; HIGH QUALITY; HIGH-TEMPERATURE ANNEALING; LOW TEMPERATURE ANNEALING; LOW TEMPERATURES; NON-HYDROLYTIC SOL-GEL; OXIDE THIN FILMS; SOLUTION-PROCESSED; THERMAL-ANNEALING; ZINC TIN OXIDE;

ANNEALING; ESTERIFICATION; ESTERS; HIGH TEMPERATURE APPLICATIONS; OXIDE FILMS; SOL-GELS; TEMPERATURE; THIN FILM TRANSISTORS; TIN; TIN OXIDES; ZINC;

THIN FILMS;

EID: 84867840768     PISSN: 09280707     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10971-012-2832-5     Document Type: Article

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