Spin-based MOSFETs for logic and memory applications and spin accumulation signals in CoFe/Tunnel barrier/SOI devices

IEEE Transactions on Magnetics

Volumn 48, Issue 11, 2012, Pages 2739-2745

  Saito, Yoshiaki ^a   Ishikawa, Mizue ^a   Inokuchi, Tomoaki ^a   Sugiyama, Hideyuki ^a   Tanamoto, Tetsufumi ^a   Hamaya, Kohei ^b   Tezuka, Nobuki ^c  

^a TOSHIBA CORPORATION   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

MOS devices; Spin injection and detection; Spin polarized transport; Spin relaxation.

Indexed keywords

ABSOLUTE VALUES; BIAS VOLTAGE DEPENDENCE; CONDUCTION CHANNEL; DIFFUSION MODEL; EVAPORATION METHOD; FERROMAGNETS; INTERFACE RESISTANCE; MEMORY APPLICATIONS; MGO; MOSFETS; NONLOCAL; ROOM TEMPERATURE; SPIN DIFFUSIONS; SPIN INJECTION; SPIN POLARIZED TRANSPORT; SPIN PRECESSION; SPIN RELAXATION; SPIN SIGNAL; SPIN-ACCUMULATIONS; TEMPERATURE RANGE; VOLTAGE CHANGE;

DIFFUSION; FERROMAGNETIC MATERIALS; FERROMAGNETISM; INNOVATION; MOS DEVICES; SPIN POLARIZATION;

SILICON;

EID: 84867818392     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2012.2202277     Document Type: Article

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