Spin injection, transport, and read/write operation in spin-based MOSFET

Thin Solid Films

Volumn 519, Issue 23, 2011, Pages 8266-8273

  Saito, Yoshiaki ^a   Marukame, Takao ^a   Inokuchi, Tomoaki ^a   Ishikawa, Mizue ^a   Sugiyama, Hideyuki ^a   Tanamoto, Tetsufumi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Heusler alloy; Magnetocurrent ratio; Read write endurance; Spin dependent transport; Spin MOSFET; Spin transfer torque switching

Indexed keywords

HEUSLER ALLOYS; MAGNETOCURRENT; READ/WRITE ENDURANCE; SPIN TRANSFER; SPIN-DEPENDENT TRANSPORT; SPIN-MOSFET;

CARBON DIOXIDE; DURABILITY; STATIC RANDOM ACCESS STORAGE; SWITCHING FUNCTIONS; TRANSPORT PROPERTIES; TUNNEL JUNCTIONS;

MOSFET DEVICES;

EID: 80052758874     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.03.073     Document Type: Conference Paper

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