Scalability of spin field programmable gate arrary: A reconfigurable architecture based on spin metal-oxide-semiconductor field effect transistor

Journal of Applied Physics

Volumn 109, Issue 7, 2011, Pages

  Tanamoto, Tetsufumi ^a   Sugiyama, Hideyuki ^a   Inokuchi, Tomoaki ^a   Marukame, Takao ^a   Ishikawa, Mizue ^a   Ikegami, Kazutaka ^a   Saito, Yoshiaki ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

45NM TECHNOLOGY; MAGNETOCURRENT; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MOS-FET; NON-VOLATILE MEMORIES; PROGRAMMABLE GATE; RECONFIGURABLE ARCHITECTURE; SPIN FIELDS; TRANSISTOR SIZE;

DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; FIELD EFFECT TRANSISTORS; LOGIC GATES; MOSFET DEVICES; SCALABILITY; STATIC RANDOM ACCESS STORAGE;

FIELD PROGRAMMABLE GATE ARRAYS (FPGA);

EID: 79955452505     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3537923     Document Type: Conference Paper

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