Effect of the interface resistance of CoFe/MgO contacts on spin accumulation in silicon

Applied Physics Letters

Volumn 100, Issue 25, 2012, Pages

  Ishikawa, M ^a   Sugiyama, H ^a   Inokuchi, T ^a   Hamaya, K ^b   Saito, Y ^a  

^a TOSHIBA CORPORATION   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACE RESISTANCE; LARGE SPIN; ROOM TEMPERATURE DETECTION; SI DEVICES; SPIN SIGNAL; SPIN-ACCUMULATIONS; TUNNEL BARRIER;

PHYSICAL PROPERTIES; PHYSICS;

SILICON;

EID: 84863317669     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4728117     Document Type: Article

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