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Volumn 51, Issue 9 PART 2, 2012, Pages

Strain-induced electrical properties of lead zirconate titanate thin films on a Si wafer with controlled oxide electrode structure

(8) Ohno, Tomoya a Ishiduka, Masaaki b Arai, Takashi b Yanagida, Hiroaki a Matsuda, Takeshi a Sakamoto, Naonori b Wakiya, Naoki b Suzuki, Hisao b

a KITAMI INSTITUTE OF TECHNOLOGY (Japan)

b SHIZUOKA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; COMPRESSIVE RESIDUAL STRESS; COMPRESSIVE STRAIN; LANTHANUM NICKEL OXIDES; LANTHANUM STRONTIUM COBALT OXIDE; LAYER THICKNESS; LEAD ZIRCONATE TITANATE THIN FILMS; MORPHOTROPIC PHASE BOUNDARIES; OXIDE ELECTRODES; PZT THIN FILM; SI WAFER; THERMAL EXPANSION COEFFICIENTS;

COBALT; FERROELECTRIC MATERIALS; FERROELECTRIC THIN FILMS; LANTHANUM; LANTHANUM ALLOYS; LANTHANUM OXIDES; RESIDUAL STRESSES; SEMICONDUCTING LEAD COMPOUNDS; SILICON; SILICON WAFERS; STRONTIUM; THIN FILMS;

ELECTRIC PROPERTIES;

EID: 84867751981 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.51.09LA13 Document Type: Conference Paper

Times cited : (8)

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