Characterization of polarization switching behavior of Pt/SrBi2Ta2O9/Pt ferroelectric capacitors in ferroelectric random access memory

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 A, 2002, Pages 694-697

  Kang, Young Min ^a   Chung, Choong Heui ^a   Oh, Sang Hyun ^a   Yang, Beelyong ^a   Lee, Seaung Suk ^a   Hong, Suk Kyoung ^a   Kang, Nam Soo ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

FeRAM; Ferroelectric; High speed; SrBi2Ta2O9 (SBT); Switching

Indexed keywords

CAPACITORS; CHARACTERIZATION; PLATINUM; POLARIZATION; RANDOM ACCESS STORAGE; SWITCHING;

FERROELECTRIC CAPACITORS; POLARIZATION SWITCHING;

FERROELECTRIC DEVICES;

EID: 0036478351     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.694     Document Type: Article

References (3)

1. Ferroelectric memories