TEM microstructure analysis for compressively stressed Pb(Zr,Ti)O 3 thin films by CSD-derived LaNiO3 bottom electrodes

Functional Materials Letters

Volumn 5, Issue 2, 2012, Pages

  Ozawa, Kotaro ^a   Ishizuka, Masaaki ^a   Sakamoto, Naonori ^a   Ohno, Tomoya ^b   Kiguchi, Takanori ^c   Matsuda, Takeshi ^b   Konno, Toyohiko ^c   Wakiya, Naoki ^a   Suzuki, Hisao ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

^b KITAMI INSTITUTE OF TECHNOLOGY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

CSD; PZT; stress; TEM; thin film

Indexed keywords

BOTTOM ELECTRODES; CHEMICAL SOLUTION DEPOSITION METHOD; CSD; FERROELECTRIC AND PIEZOELECTRIC PROPERTIES; FERROELECTRIC PROPERTY; MICROSTRUCTURE ANALYSIS; MORPHOTROPIC PHASE BOUNDARIES; PB(ZR , TI)O; PZT; PZT FILM; SI SUBSTRATES;

ELECTRODES; FERROELECTRICITY; LEAD; MICROSTRUCTURE; PEROVSKITE; STRESS CONCENTRATION; STRESSES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; ZIRCONIUM;

FERROELECTRIC FILMS;

EID: 84862234213     PISSN: 17936047     EISSN: 17937213     Source Type: Journal    
DOI: 10.1142/S1793604712600168     Document Type: Conference Paper

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