Fabrication of freestanding Pb(Zr,Ti)O film microstructures using Ge sacrificial layer

Japanese Journal of Applied Physics

Volumn 51, Issue 2 PART 1, 2012, Pages

  Lee, Jae Wung ^a   Kawai, Yusuke ^a   Tanaka, Shuji ^a   Lin, Yu Ching ^a   Gessner, Thomas ^a,b,c   Esashi, Masayoshi ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b FRAUNHOFER INSTITUTE FOR ELECTRONIC NANO SYSTEMS ENAS   (Germany)

^c CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCESS; CLAMPING EFFECTS; FERROELECTRIC PROPERTY; FILM MICROSTRUCTURES; HIGH QUALITY; LOW TEMPERATURES; MICROPATTERNS; PB(ZR , TI)O; PT FILMS; PZT; PZT FILM; RF-MAGNETRON SPUTTERING; SACRIFICIAL LAYER; SI SUBSTRATES;

GERMANIUM; LEAD; MICROELECTROMECHANICAL DEVICES; SILICON; ZIRCONIUM;

PLATINUM;

EID: 84863121250     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.021502     Document Type: Article

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