Stress control and ferroelectric properties of lead zirconate titanate (PZT) thin film on Si substrate with buffer layers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 9 B, 2005, Pages 6900-6904

  Fujito, Keisuke ^a   Wakiya, Naoki ^a   Mizutani, Nobuyasu ^a   Shinozaki, Kazuo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Chemical vapor deposition; Lead zirconate titanate; Pulsed laser deposition; Remanent polarization; Residual stress; Silicon; Thin film

Indexed keywords

FERROELECTRICITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PULSED LASER DEPOSITION; RESIDUAL STRESSES; STRESS ANALYSIS; TENSILE STRESS; THIN FILMS; YTTRIUM COMPOUNDS;

BUFFER LAYERS; FERROELECTRIC PROPERTIES; REMANENT POLARIZATION;

LEAD COMPOUNDS;

EID: 31844457217     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.6900     Document Type: Article

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