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Volumn 45, Issue 45, 2012, Pages

Stabilization of p-type dopant nitrogen in BeZnO ternary alloy epitaxial thin films

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR DOPANTS; C-SAPPHIRE; EPITAXIAL THIN FILMS; INTERSTITIAL SITES; LATTICE SITES; P-TYPE DOPANT; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SOLID SOLUBILITIES; WIDE-GAP SEMICONDUCTOR;

EID: 84867641395     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/45/45/455101     Document Type: Article
Times cited : (20)

References (26)
  • 10
    • 17944381476 scopus 로고    scopus 로고
    • On the formation and stability of p-type conductivity in nitrogen-doped zinc oxide
    • DOI 10.1063/1.1884747, 112112
    • Barnes T M, Olson K and Wolden C A 2005 Appl. Phys. Lett. 86 112112 (Pubitemid 40597018)
    • (2005) Applied Physics Letters , vol.86 , Issue.11 , pp. 1-3
    • Barnes, T.M.1    Olson, K.2    Wolden, C.A.3
  • 25
    • 18244431984 scopus 로고    scopus 로고
    • Codoping for the fabrication of p-type ZnO
    • DOI 10.1016/S0040-6090(02)00655-7, PII S0040609002006557
    • Yamamoto T 2002 Thin Solid Films 420 100 (Pubitemid 35465861)
    • (2002) Thin Solid Films , vol.420-421 , pp. 100-106
    • Yamamoto, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.