ZnO film with ultra-low background electron concentration grown by plasma-assisted MBE using Mg film as the buffer layer

Materials Research Bulletin

Volumn 47, Issue 9, 2012, Pages 2673-2675

  Chen, Mingming ^a   Zhang, Quanlin ^a   Su, Longxing ^a   Su, Yuquan ^a   Cao, Jiashi ^a   Zhu, Yuan ^a   Wu, Tianzhun ^a   Gui, Xuchun ^a   Yang, Chunlei ^b   Xiang, Rong ^a   Tang, Zikang ^a,c  

^a SUN YAT SEN UNIVERSITY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

A. Oxides; B. Epitaxial growth; C. X ray diffraction; D. Defects; E. Electrical properties

Indexed keywords

BACKGROUND ELECTRON CONCENTRATION; C-SAPPHIRE; HIGH QUALITY; HIGH RESOLUTION; METAL SEMICONDUCTOR METAL; MG FILMS; ON/OFF RATIO; P-TYPE DOPING; PLASMA-ASSISTED MBE; XRD MEASUREMENTS; ZNO; ZNO FILMS;

BUFFER LAYERS; DEFECTS; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; PHOTOLUMINESCENCE SPECTROSCOPY; SAPPHIRE; X RAY DIFFRACTION; ZINC OXIDE;

SEMICONDUCTOR DOPING;

EID: 84864582762     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2012.05.054     Document Type: Article

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