Possible approach to fabricate p-type ZnO through the BeN codoping method: First-principles calculations

Solid State Communications

Volumn 152, Issue 1, 2012, Pages 1-4

  Tang, Xin ^a   Deng, Yanzhen ^b   Wagner, Dustin ^c   Yu, Liang ^a   Lü, Haifeng ^d  

^a GUILIN UNIVERSITY OF TECHNOLOGY   (China)

^b GUILIN UNIVERSITY OF ELECTRONIC TECHNOLOGY   (China)

^c University of Wisconsin Madison   (United States)

^d INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

A. Semiconductors; C. Ab initio calculations; D. Electronic structure

Indexed keywords

AB INITIO CALCULATIONS; CO-DOPED; CO-DOPED ZNO; CODOPING METHOD; FIRST-PRINCIPLES CALCULATION; FORMATION ENERGIES; IMPURITY BANDS; N-DEFECTS; P TYPE ZNO; P-TYPE CONDUCTIVITY; STRUCTURAL STABILITIES; TRANSITION ENERGY;

CRYSTAL DEFECTS; DENSITY FUNCTIONAL THEORY; ELECTRONIC STRUCTURE; STABILITY; ZINC; ZINC OXIDE;

CALCULATIONS;

EID: 81555200039     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2011.10.024     Document Type: Article

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