Band-gap bowing and p-type doping of (Zn, Mg, Be)O wide-gap semiconductor alloys: A first-principles study

European Physical Journal B

Volumn 66, Issue 4, 2008, Pages 439-444

  Shi, H L ^a   Duan, Y ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b CHINA UNIVERSITY OF MINING AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC ENERGY LEVELS; BAND ALIGNMENTS; BAND GAP BOWING PARAMETERS; BAND GAPS; BOWING PARAMETERS; FIRST-PRINCIPLES; FIRST-PRINCIPLES STUDIES; GAN SUBSTRATES; LATTICE-MATCHED; N-DOPED; NEAREST NEIGHBORS; P-TYPE DOPING; QUATERNARY ALLOYS; SIZE DIFFERENCES; SPECIAL QUASIRANDOM STRUCTURES; TRANSITION ENERGIES; VALENCE-BAND MAXIMUMS; WIDE-GAP SEMICONDUCTOR ALLOYS; ZNO;

ALLOYS; ATOMIC PHYSICS; ATOMS; DOPING (ADDITIVES); ENERGY GAP; GALLIUM NITRIDE; METALLIC COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS; SOLID STATE PHYSICS; ZINC; ZINC OXIDE;

GALLIUM ALLOYS;

EID: 58949102058     PISSN: 14346028     EISSN: 14346036     Source Type: Journal    
DOI: 10.1140/epjb/e2008-00448-6     Document Type: Article

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