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Journal of Crystal Growth

Volumn 184-185, Issue , 1998, Pages 415-418

Nitrogen doping in molecular-beam epitaxy growth of II-VI semiconductors

(6) Baron, T a,b Saminadayar, K b Tatarenko, S b Lugauer, H J a Waag, A a Landwehr, G a

a UNIVERSITY OF WÜRZBURG (Germany)

b CEA GRENOBLE (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002763945 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/s0022-0248(98)80087-0 Document Type: Article

Times cited : (9)

References (9)

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