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Volumn 288, Issue 1-3, 2001, Pages 88-95

Chemical and morphological properties of amorphous silicon oxynitride films deposited by plasma enhanced chemical vapor deposition

(6) Scopel, W L a Cuzinatto, R R a Tabacniks, M H a Fantini, M C A a Alayo, M I a Pereyra, I a

a UNIVERSITY OF SÃO PAULO (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGENATION; MORPHOLOGY; NITROGEN OXIDES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILANES; SILICON NITRIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY SCATTERING;

SILICON OXYNITRIDE; SMALL ANGLE X RAY SCATTERING (SAXS);

AMORPHOUS FILMS;

EID: 0035423383 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(01)00608-1 Document Type: Article

Times cited : (17)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.