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Applied Physics Letters

Volumn 101, Issue 14, 2012, Pages

Field-effect diode based on electron-induced Mott transition in NdNiO 3

(7) Lim, W L a Moon, E J b Freeland, J W c Meyers, D J b Kareev, M b Chakhalian, J b Urazhdin, S a

a EMORY UNIVERSITY (United States)

b UNIVERSITY OF ARKANSAS (United States)

c ARGONNE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGES; BIAS POLARITY; ELECTRON-DOPING; FIELD-EFFECT; IV CHARACTERISTICS; MOTT TRANSITIONS; TEMPERATURE DEPENDENT; THERMAL HISTORY; TWO-TERMINAL DEVICES;

SEMICONDUCTOR INSULATOR BOUNDARIES;

BIAS VOLTAGE;

EID: 84867568887 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4757865 Document Type: Article

Times cited : (20)

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