A heteroepitaxial perovskite metal-base transistor

Nature Materials

Volumn 10, Issue 3, 2011, Pages 198-201

  Yajima, Takeaki ^a   Hikita, Yasuyuki ^a   Hwang, Harold Y ^a,b,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; ELECTRON DEVICES; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; GROUND STATE; HETEROJUNCTIONS; INTERFACE STATES; PEROVSKITE;

CONSTITUENT MATERIALS; DIFFERENT GEOMETRY; ELECTRONIC PHASIS; INTERNAL ELECTRIC FIELDS; METAL BASE TRANSISTORS; PEROVSKITE OXIDES; SILICON ELECTRONICS; STRONGLY CORRELATED ELECTRONS;

TRANSISTORS;

EID: 79951941606     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat2946     Document Type: Article

References (29)

1. The International Technology Roadmap for Semiconductors: http://www.itrs.net.
2. Takagi, H. & Hwang, H. Y. An emergent change of phase for electronics. Science 327, 1601-1602 (2010).
3. Kahng, D. & Atalla, M. M. IEEE-AIEE Solid-State Device Res. Conf. (Carnegie Inst. of Tech., 1960).
4. Mannhart, J., Schlom, D. G., Bednorz, J. G. & Muller, K. A. Influence of electric fields on pinning in YBa2Cu3O7-films. Phys. Rev. Lett. 67, 2099-2101 (1991).
5. Takahashi, K. S. et al. Local switching of two-dimensional superconductivity using the ferroelectric field effect. Nature 441, 195-198 (2006).
6. Ueno, K. et al. Electric-field-induced superconductivity in an insulator. Nature Mater. 7, 855-858 (2008).
7. Schockley, W., Sparks, M. & Teal, G. K. p-n junction transistors. Phys. Rev. 83, 151-162 (1951).
8. Mead, C. A. Operation of tunnel-emission devices. J. Appl. Phys. 32, 646-652 (1961).
9. Hikita, Y., Nishikawa, M., Yajima, T. & Hwang, H. Y. Termination control of the interface dipole in La0:7Sr0:3MnO3=Nb V SrTiO3(001) Schottky junctions. Phys. Rev. B 79, 073101 (2009).
10. Sze, S. M., Crowell, C. R., Carey, G. P. & LaBate, E. E. Hot electron transport in semiconductor-metal-semiconductor structures. J. Appl. Phys. 37, 2690-2695 (1966).
11. Bozler, C. O. & Alley, G. D. Fabrication and numerical simulation of the permeable base transistor. IEEE Trans. Electron Devices ED-27, 1128-1141 (1980).
12. Ohtomo, A., Muller, D. A., Grazul, J. L. & Hwang, H. Y. Artificial charge-modulation in atomic-scale perovskite titanate superlattices. Nature 419, 378-380 (2002).
13. Ohtomo, A. & Hwang, H. Y. A high-mobility electron gas at the LaAlO3=SrTiO3 heterointerface. Nature 427, 423-426 (2004). (Pubitemid 38168490)
14. Smadici, S. et al. Electronic reconstruction at SrMnO3-LaMnO3 superlattice interfaces. Phys. Rev. Lett. 99, 196404 (2007).
15. Gozar, A. et al. High-temperature interface superconductivity between metallic and insulating copper oxides. Nature 455, 782-785 (2008).
16. Ahn, C. H., Triscone, J-M. & Mannhart, J. Electric field effect in correlated oxide systems. Nature 424, 1015-1018 (2003). (Pubitemid 37069244)
17. Bardeen, J. & Brattain, W. H. The transistor, a semi-conductor triode. Phys. Rev. 74, 230-231 (1948).
18. Sze, S. M. & Ng, K. K. Physics of Semiconductor Devices 3rd edn (John Wiley, 2007).
19. Monsma, D. J., Lodder, J. C., Popma, T. J. A. & Dieny, B. Perpendicular hot electron spin-valve effect in a new magnetic field sensor: The spin-valve transistor. Phys. Rev. Lett. 74, 5260-5263 (1995).
20. Capasso, F., Cho, A. Y., Mohammed, K. & Foy, P. W. Doping interface dipoles: Tunable heterojunction barrier heights and band-edge discontinuities by molecular beam epitaxy. Appl. Phys. Lett. 46, 664-666 (1985).
21. Higuchi, T. et al. Mn3O4 precipitates in laser-ablated manganite films. Appl. Phys. Lett. 95, 043112 (2009).
22. Crowell, C. R. & Sze, S. M. Current transport in metal-semiconductor barriers. Solid-State Electron. 9, 1035-1048 (1966).
23. Shockley, W. & Prim, R. C. Space-charge limited emission in semiconductors. Phys. Rev. 90, 753-758 (1953).
24. Li, R-W. et al. Atomic force microscope lithography in perovskite manganite La0:8Ba0:2MnO3 films. J. Appl. Phys. 95, 7091-7093 (2004).
25. Hotta, Y. et al. Electronic structure of the Mott insulator LaVO3 in a quantum-well geometry. Appl. Phys. Lett. 89, 251916 (2006).
26. Nakagawa, N. et al. Magnetocapacitance and exponential magnetoresistance in manganite-titanate heterojunctions. Appl. Phys. Lett. 86, 082504 (2005).
27. Jansen, R. et al. Thermal spin-wave scattering in hot-electron magnetotransport across a spin valve. Phys. Rev. Lett. 85, 3277-3280 (2000).
28. Song, J. H., Susaki, T. & Hwang, H. Y. Enhanced thermodynamic stability of epitaxial oxide thin films. Adv. Mater. 20, 2528-2532 (2008).
29. Kawasaki, M. et al. Atomic control of the SrTiO3 crystal surface. Science 266, 1540-1542 (1994).