Atomic-layer-deposited ZnO thin-film transistors with various gate dielectrics

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 10, 2012, Pages 2087-2090

  Yang, Jaehyun ^a   Park, Joong Keun ^a   Kim, Sunkook ^b   Choi, Woong ^c   Lee, Sangyoon ^d   Kim, Hyoungsub ^a  

^a Sungkyunkwan University   (South Korea)

^b Kyung Hee University   (South Korea)

^c Kookmin University   (South Korea)

^d Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

atomic layer deposition; gate dielectrics; high k dielectrics; thin film transistors; ZnO

Indexed keywords

ATOMIC LAYER DEPOSITED; CRYSTALLINITIES; CRYSTALLOGRAPHIC PROPERTIES; DEVICE PERFORMANCE; FIELD-EFFECT MOBILITIES; GATE DIELECTRIC LAYERS; HIGH-K DIELECTRIC; HYDROPHILIC SURFACES; ON/OFF RATIO; SUBTHRESHOLD SWING; THIN-FILM TRANSISTOR (TFTS); ZNO;

ALUMINUM; DEPOSITS; DIELECTRIC MATERIALS; GATE DIELECTRICS; HAFNIUM OXIDES; SURFACE ROUGHNESS; THIN FILM TRANSISTORS; ZINC OXIDE;

ATOMIC LAYER DEPOSITION;

EID: 84867498727     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201228303     Document Type: Article

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