Low voltage, high performance thin film transistor with HfInZnO channel and HfO2 gate dielectric

Electrochemical and Solid-State Letters

Volumn 13, Issue 8, 2010, Pages

  Son, Dae Ho ^a   Kim, Dae Hwan ^a   Kim, Jung Hye ^a   Sung, Shi Joon ^a   Jung, Eun Ae ^a   Kang, Jin Kyu ^a  

^a Daegu Gyeongbuk Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE CHANNEL LAYERS; COSPUTTERING; ELECTRICAL CHARACTERISTIC; FIELD-EFFECT MOBILITIES; LOW VOLTAGES; OFF CURRENT; ON/OFF RATIO; RADIO-FREQUENCY POWER; SUBTHRESHOLD SWING;

GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM; HAFNIUM COMPOUNDS; OXYGEN; OXYGEN VACANCIES; THIN FILMS; VAPOR DEPOSITION;

THIN FILM TRANSISTORS;

EID: 77953595273     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3428510     Document Type: Article

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