A 160-GHz subharmonic transmitter and receiver chipset in an SiGe HBT technology

IEEE Transactions on Microwave Theory and Techniques

Volumn 60, Issue 10, 2012, Pages 3286-3299

  Zhao, Yan ^a   Öjefors, Erik ^a   Aufinger, Klaus ^b   Meister, Thomas F ^b   Pfeiffer, Ullrich R ^a  

^a UNIVERSITY OF WUPPERTAL   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Heterojunction bipolar transistors (HBTs); millimeter wave integrated circuits; silicon germanium (SiGe); sub harmonic; transceiver architectures

Indexed keywords

AUXILIARY INPUTS; BASE BANDS; CHIPSET; CONVERSION GAIN; DIFFERENTIAL POWER AMPLIFIER; DOWNCONVERSION; FREQUENCY LOCKING; IN-PHASE/QUADRATURE; LOCAL OSCILLATORS; MILLIMETER WAVE FREQUENCIES; MILLIMETER-WAVE INTEGRATED CIRCUITS; MONOLITHICALLY INTEGRATED; ON CHIPS; OUTPUT POWER; PRESCALERS; QUADRATURE MIXER; SIGE-HBT TECHNOLOGY; SILICON GERMANIUM; SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS; SUB-HARMONIC MIXER; SUBHARMONICS; TRANSCEIVER ARCHITECTURE; TRANSMITTER AND RECEIVER;

LOW NOISE AMPLIFIERS; MIXERS (MACHINERY); MONOLITHIC INTEGRATED CIRCUITS; OSCILLISTORS; PHASE LOCKED LOOPS; TRANSMITTERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 84867100946     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2012.2209450     Document Type: Article

References (25)

1. P. de Maagt, P. H. Bolivar, and C. Mann, "Terahertz science, engineering and systems-From space to earth applications," in Encyclopedia of RF and Microwave Engineering, K. Chang, Ed. New York: Wiley, 2005, pp. 5175-5194.
2. R. Rasshofer, "Functional requirements of future automotive radar systems," in Eur. Radar Conf., Oct. 2007, pp. 259-262.
3. D. L. Woolard, J. O. Jensen, R. J. Hwu, and M. S. Shur, Terahertz Science and Technology for Military and Security Applications. Singapore: World Sci., 2007.
4. E. Laskin, K. Tang, K. Yau, P. Chevalier, A. Chantre, B. Sautreuil, and S. P. Voinigescu, "170-GHz transceiver with on-chip antennas in SiGe technology," in IEEE Radio Freq. Integr. Circuits. Symp., Jun. 2008, pp. 637-640.
5. E.Öjefors, F. Pourchon, P. Chevalier, and U. R. Pfeiffer, "A 160-GHz low-noise downconverter in a SiGe HBT technology," in Eur. Microw. Conf., Oct. 2010, pp. 521-524.
6. U. R. Pfeiffer, E.Öjefors, and Y. Zhao, "A SiGe quadrature transmitter and receiver chipset for emerging high-frequency applications at 160 GHz," in IEEE Int. Solid-State Circuits Conf., Feb. 2010, pp. 416-417.
7. R. Svitek and S. Raman, "A SiGe active sub-harmonic front-end for 5-6 GHz direct conversion receiver applications," in IEEE Radio Freq. Integr. Circuits Symp., Jun. 2004, pp. 675-678.
8. P. Lindberg, E.Öjefors, E. Sönmez, and A. Rydberg, "A SiGe HBT 24 GHz sub-harmonic direct-conversion IQ demodulator," in Silicon Monolithic Integr. Circuits RF Syst. Top. Meeting, Jun. 2004, pp. 247-250.
9. A. Müller, M. Thiel, H. Irion, and H.-O. Ruoss, "A 122 GHz SiGe active subharmonic mixer," in 13th GAAS Symp., Paris, France, Oct. 2005, pp. 57-60.
10. E. Öjefors and U. Pfeiffer, "A 94-GHz monolithic front-end for imaging arrays in SiGe: C technology," in Eur. Microw. Integr. Circuits Conf., Oct. 2008, pp. 422-425.
11. K. Schmalz, W. W. J. Borngräber, W. Debski, B. Heinemann, and J. C. Scheytt, "A subharmonic receiver in SiGe technology for 122 GHz sensor applications," IEEE J. Solid-State Circuits, vol. 45, no. 9, pp. 1644-1656, Sep. 2010.
12. A. Parsa and B. Razavi, "A 60 GHz CMOS receiver using a 30 GHz LO," in IEEE Int. Solid-State Circuits Conf., 2008, pp. 190-191.
13. A. Hajimiri and T. H. Lee, "A general theory of phase noise in electrical oscillators," IEEE J. Solid-State Circuits, vol. 33, no. 2, pp. 179-194, Feb. 1998.
14. A. Fard and P. Andreani, "An analysis of phase noise in bipolar colpitts oscillators (with a digression on bipolar differential-pair LC oscillators)," IEEE J. Solid-State Circuits, vol. 42, no. 2, pp. 374-384, Feb. 2007.
15. J. Boeck, H. Schaefer, K. Aufinger, R. Stengl, S. Boguth, R. Schreiter, M. Rest, H. Knapp, M. Wurzer, W. Perndl, T. Boettner, and T. F. Meister, "SiGe bipolar technology for automotive radar applications," in Proc. Bipolar/BiCMOS Circuits Technol. Meeting, Sep. 2004, pp. 84-87.
16. R. K. Vytla, T. F. Meister, K. Aufinger, D. Lukashevich, S. Boguth, H. Knapp, J. Boeck, H. Schaefer, and R. Lachner, "Simultaneous integration of SiGe high speed transistors and high voltage transistors," in Proc. Bipolar/BiCMOS Circuits Technol. Meeting, Sep. 2006, pp. 61-64.
17. U. R. Pfeiffer, "Low-loss contact pad with tuned impedance for operation at millimeter-wave frequencies," in 9th IEEE Signal Propag. Interconnects Workshop, May 2005, pp. 61-64.
18. P. Sakalas, J. Herricht, A. Chakravorty, and M. Schroter, "Compact modeling of high frequency correlated noise in HBTs," in Proc. Bipolar/BiCMOS Circuits Technol. Meeting, 2006, pp. 1-4.
19. K. Yau and S. Voinigescu, "Modeling and extraction of SiGe HBT noise parameters from measured-parameters and accounting for noise correlation," Proc. SiRF, pp. 226-229, 2006.
20. K. Yau, P. Chevalier, A. Chantre, and S. Voinigescu, " Characterization of the noise parameters of SiGe hbts in the 70-170 GHz range," IEEE Trans. Microw. Theory Tech., vol. 59, no. 8, pp. 1983-2000, Aug. 2011.
21. M. Abbasi, S. E. Gunnarsson, N. Wadefalk, R. Kozhuharov, J. Svedin, I. Kallfass, A. Leuther, and H. Zirath, "Single-chip 220-GHz active heterodyne receiver and transmitter MMICs with on-chip integrated antenna," IEEE Trans. Microwav. Theory Tech., vol. 59, no. 2, pp. 466-478, Feb. 2011.
22. I. Sarkas, J. Hasch, A. Balteanu, and S. Voinigescu, "A fundamental frequency 120-GHz SiGe BiCMOS distance sensor with integrated antenna," IEEE Trans. Microw. Theory Tech., vol. 60, no. 3, pp. 795-812, Mar. 2012.
23. E. Laskin, M. Khanpour, S. Nicolson, A. Tomkins, P. Garcia, A. Cathelin, D. Belot, and S. Voinigescu, "Nanoscale CMOS transceiver design in the 90-170-GHz range," IEEE Trans. Microw. Theory Tech., vol. 57, no. 12, pp. 3477-3490, Dec. 2009.
24. A. Tang, G. Virbila, D. Murphy, F. Hsiao, Y. Wang, Q. Gu, Z. Xu, Y. Wu, M. Zhu, and M.-C. F. Chang, "A 144 GHz 0.76 cm-resolution 14 sub-carrier SAR phase radar for 3-D imaging in 65 nm CMOS," in IEEE Int. Solid-State Circuits Conf., Feb. 2012, pp. 264-265.
25. E. Öjefors, B. Heinemann, and U. Pfeiffer, "Subharmonic 220-and 320-GHz SiGe HBT receiver front-ends," IEEE Trans. Microw. Theory Tech., vol. 60, no. 5, pp. 1397-1404, May 2012.