A subharmonic receiver in SiGe technology for 122 GHz sensor applications

IEEE Journal of Solid-State Circuits

Volumn 45, Issue 9, 2010, Pages 1644-1656

  Schmalz, Klaus ^a   Winkler, Wolfgang ^b   Borngräber, Johannes ^a   Debski, Wojciech ^b   Heinemann, Bernd ^a   Scheytt, J Christoph ^a  

^a IHP   (Germany)

^b SILICON RADAR GMBH   (Germany)

Author keywords

122 GHz; Low noise amplifier (LNA); millimeter wave circuits; SiGe technology; subharmonic mixer; voltage controlled oscillator (VCO)

Indexed keywords

122 GHZ; MILLIMETER WAVE CIRCUITS; SIGE TECHNOLOGY; SUB-HARMONIC MIXER; VOLTAGE CONTROLLED OSCILLATOR;

BANDPASS FILTERS; DESIGN; ELECTRIC CONVERTERS; LOW NOISE AMPLIFIERS; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; MIXERS (MACHINERY); SEMICONDUCTING SILICON; SILICON ALLOYS; TECHNOLOGY; VARIABLE FREQUENCY OSCILLATORS; VOLTAGE DIVIDERS;

BICMOS TECHNOLOGY;

EID: 77956205609     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2010.2051474     Document Type: Conference Paper

References (30)

1. G. Avenier, M. Diop, P. Chevalier, G. Troillard, N. Loubet, J. Bouvier, L. Depoyan, N. Derrier, M. Buczko, C. Leyris, S. Boret, S. Montusclat, A. Margain, S. Pruvost, S. T. Nicolson, K. H. K. Yau, N. Revil, D. Gloria, D. Dutartre, S. P. Voinigescu, and A. Chantre, "0.13 μm SiGe BiCMOS technology fully dedicated to mm-wave applications," IEEE J. Solid-State Circuits, vol. 44, no. 9, pp. 2312-2321, Sep. 2009.
2. E. Laskin, M. Khanpour, S. T. Nicolson, A. Tomkins, P. Garcia, A. Cathelin, D. Belot, and S. P. Voinigescu, "Nanoscale CMOS transceiver design in the 90-170 GHz range," IEEE Trans. Microw. Theory Tech., vol. 57, no. 12, pp. 3477-3490, Dec. 2009.
3. H. Rücker, B. Heinemann, W. Winkler, R. Barth, J. Borngräber, J. Drews, G. G. Fischer, A. Fox, T. Grabolla, U. Haak, D. Knoll, F. Korndörfer, A. Mai, S. Marschmeyer, P. Schley, D. Schmidt, J. Schmidt, K. Schulz, B. Tillack, D. Wolansky, and Y. Yamamoto, "A 0.13 μm SiGe BiCMOS technology featuring- of 240/330 GHz and gate delays below 3 ps," in Proc. BCTM 2009, Oct. 2009, pp. 166-169.
4. S. Van Huylenbroeck, A. Sibaja-Hernandez, R. Venegas, S. You, G. Winderickx, D. Radisic, W. Lee, P. Ong, T. Vandeweyer, N. D. Nguyen, K. De Meyer1, and S. Decoutere, "A 400 GHz- fully self-aligned SiGe:C HBT architecture," in Proc. BCTM 2009, Oct. 2009, pp. 182-185.
5. S. Decoutere, S. Van Huylenbroeck, B. Heinemann, A. Fox, P. Chevalier, A. Chantre, T. F. Meister, K. Aufinger, and M. Schröter, "Advanced process modules and architectures for half-terahertz SiGe:C HBTs," in Proc. BCTM 2009, Oct. 2009, pp. 9-16.
6. M. Steinhauer, H. Irion, M. Schott, M. Thiel, H.-O. Ruoss, and W. Heinrich, "SiGe-based circuits for sensor applications beyond 100 GHz," in 2004 IEEE MTT-S Microwave Symp. Dig., Jun. 2004, vol. 1, pp. 223-226.
7. W. Winkler, W. Debski, B. Heinemann, F. Korndörfer, H. Rücker, K. Schmalz, C. Scheytt, and B. Tillack, "122 GHz low-noise-amplifier in SiGe technology," in Proc. ESSCIRC 2009, Sep. 2009, pp. 316-319.
8. E. Laskin, P. Chevalier, A. Chantre, B. Sautreuil, and S. Voinigescu, "165 GHz transceiver in SiGe technology," IEEE J. Solid-State Circuits, vol. 43, no. 5, pp. 1087-1100, May 2008.
9. E. Laskin, P. Chevalier, B. Sautreuil, and S. P. Voinigescu, "A 140 GHz double-sideband transceiver with amplitude and frequency modulation," in Proc. BCTM 2009, Oct. 2009, pp. 178-181.
10. A. Hirata, R. Yamaguchi, T. Kosugi, H. Takahashi, K. Murata, T. Nagatsuma, N. Kukutsu, Y. Kado, N. Iai, S. Okabe, S. Kimura, H. Ikegawa, H. Nishikawa, T. Nakayama, and T. Inada, "10-Gbit/s wireless link using InP HEMT MMICs for generating 120 GHz-band millimeter-wave signal," IEEE Trans. Microw. Theory Tech., vol. 57, no. 5, pp. 1102-1109, May 2009.
11. J. Lasker, B. Matinpour, and S. Chakraborty, Modern Receiver Front- Ends. Hoboken, NJ: Wiley, 2004.
12. U. R. Pfeiffer, C. Mishra, R. M. Rassel, S. Pinkett, and S. K. Reynolds, "Schottky barrier diode circuits in silicon for future millimeter-wave and terahertz applications," IEEE Trans. Microw. Theory Tech., vol. 56, no. 2, pp. 364-371, Feb. 2008.
13. B. G. Perumana, S. Chakraborty, S. Sarkar, P. Sen, D. A. Yeh, A. Raghavan, D. Dawn, C.-H. Lee, S. Pinel, and J. Laskar, "A SiGe subharmonic mixer for millimeter-wave applications," in Proc. 2nd EuMIC, Oct. 2007, pp. 80-83.
14. J.-J. Hung, T. M. Hancock, and G. M. Rebeiz, "A 77 GHz SiGe subharmonic balanced mixer," IEEE J. Solid-State Circuits, vol. 40, no. 11, pp. 2167-2173, Nov. 2005.
15. L. Sheng, J. C. Jensen, and L. E. Larson, "A wide-bandwidth Si/SiGe HBT direct conversion subharmonic mixer/downconverter," IEEE J. Solid-State Circuits, vol. 35, no. 9, pp. 1329-1337, Sep. 2000.
16. A. Müller, M. Thiel, H. Irion, and H.-O. Ruoss, "A 122 GHz SiGe active subharmonic mixer," in Proc. 13th GaAs Symp., Oct. 2005, pp. 57-60.
17. E. Öjefors and U. Pfeiffer, "A 94 GHz monolithic front-end for imaging arrays in SiGe:C technology," in Proc. 38th EMC, Oct. 2008, pp. 1449-1452.
18. K. Schmalz, W.Winkler, J. Borngräber,W. Debski, B. Heinemann, and C. Scheytt, "A 122 GHz receiver in SiGe technology," in Proc. BCTM 2009, Oct. 2009, pp. 182-185.
19. B. Dehlink, M. Engl, K. Aufinger, and H. Knapp, "Integrated bandpass filter at 77 GHz in SiGe technology," IEEE Microw. Wireless Compon. Lett., vol. 17, no. 5, pp. 346-348, May 2007.
20. H. Rücker, B. Heinemann, R. Barth, J. Bauer, K. Blum, D. Bolze, J. Drews, G. G. Fischer, A. Fox, O. Fursenko, T. Grabolla, U. Haak, W. Höppner, D. Knoll, K. Köpke, B. Kuck, A. Mai, S. Marschmeyer, T. Morgenstern, H. H. Richter, P. Schley, D. Schmidt, K. Schulz, B. Tillack, G.Weidner,W.Winkler, D.Wolansky, H.-E.Wulf, and Y. Yamamototo, "SiGe BiCMOS technology with 3.0 ps gate delay," in Proc. IEDM 2007, Dec. 2007, pp. 651-654.
21. W. Winkler, J. Borngräber, F. Korndörfer, and C. Scheytt, "94 GHz amplifier in SiGe technology," in Proc. 38th EMC, Oct. 2008, pp. 167-170.
22. R. M. Kodkani and L. E. Larson, "An integrated 50 GHz SiGe subharmonic mixer/downconverter with a quadrature ring VCO," in Proc. IEEE Top. Workshop on Silicon Monolithic Integrated Circuits for RF Systems, Jan. 2007, pp. 223-226.
23. K. Nakajima, N. Suematsu, K. Murakami, T. Takagi, H. Nakase, Y. Isota, and K. Tsubouchi, "A 5 GHz-band SiGe-MMIC quadrature modulator using a circular polyphase filter for 1 Gbps transmission," in Proc. 38th EMC, Oct. 2005, pp. 979-982.
24. A. Parsa and B. Razavi, "A new transceiver architecture for the 60 GHz band," IEEE J. Solid-State Circuits, vol. 44, no. 3, pp. 751-762, Mar. 2009.
25. R.Wanner, R. Lachner, and G. R. Olbricht, "Monolithically integrated SiGe push-push oscillators in the frequency range 50-190 GHz," in Proc. IEEE Int. Symp. Spread Spectrum Techniques and Applications, 2006, pp. 26-30.
26. R.Wanner, R. Lachner, and G. R. Olbricht, "SiGe integrated mm-wave push-push VCOs with reduced power consumption," in Proc. 2006 IEEE Radio Frequency Integrated Circuits (RFIC) Symp., Jun. 11-13, 2006, pp. 483-486.
27. T. Nakamura, T. Masuda, K.Washio, and H.Kondoh, "A 59 GHz pushpush VCO with 13.9 GHz tuning range using loop-ground transmission line for a fullband 60 GHz transceiver," in IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, 2009, pp. 496-497.
28. IAF, Freiburg, Germany [Online]. Available: www.iaf.fraunhofer.de
29. U. R. Pfeifer, E. Öjefors, and Y. Zhao, "A SiGe quadrature transmitter and receiver chipset for emerging high-frequency applications at 160 GHz," in 2010 IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers.
30. H. Rücker, B. Heinemann, W. Winkler, R. Barth, J. Borngräber, J. Drews, G. G. Fischer, A. Fox, T. Grabolla, U. Haak, D. Knoll, F. Korndörfer, A. Mai, S. Marschmeyer, P. Schley, D. Schmidt, J. Schmidt, K. Schulz, B. Tillack, D. Wolansky, and Y. Yamamoto, "A 0.13 μm SiGe BiCMOS technology featuring- of 240/330 GHz and gate delays below 3 ps," IEEE J. Solid-State Circuits, vol. 45, no. 9, Sep. 2010, this issue.