Subharmonic 220- and 320-GHz SiGe HBT receiver front-ends

IEEE Transactions on Microwave Theory and Techniques

Volumn 60, Issue 5, 2012, Pages 1397-1404

  Öjefors, Erik ^a   Heinemann, Bernd ^b   Pfeiffer, Ullrich R ^c  

^a Sivers IMA AB   (Sweden)

^b IHP   (Germany)

^c UNIVERSITY OF WUPPERTAL   (Germany)

Author keywords

Heterojunction bipolar transistors (HBTs); millimeter wave receivers; monolithic microwave integrated circuit (MMIC) frequency converters; silicon

Indexed keywords

CONVERSION GAIN; FREQUENCY RANGES; FULLY INTEGRATED; GILBERT CELLS; LOCAL OSCILLATORS; MONOLITHICALLY INTEGRATED; RECEIVER FRONT-ENDS; SIGE HBTS; SIGE TECHNOLOGY; SIGE-HBT TECHNOLOGY; SINGLE-SIDEBAND NOISE; SUBHARMONIC MIXING; SUBHARMONICS;

BANDWIDTH; DIGITAL INTEGRATED CIRCUITS; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATION; LOW NOISE AMPLIFIERS; SILICON;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 84860667723     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2012.2190092     Document Type: Conference Paper

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