Simultaneous integration of SiGe high speed transistors and high voltage transistors

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2006, Pages

  Vytla, R K ^a,b   Meister, T F ^a   Aufinger, K ^a   Lukashevich, D ^a   Boguth, S ^a   Knapp, H ^a   Bock, J ^a   Schafer H ^a   Lachner, R ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b UNIVERSITY OF BREMEN   (Germany)

Author keywords

BVCEO; Double epi; High voltage npn; SiGe HBT; Varactor

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; CUTOFF FREQUENCY; ELECTRIC POTENTIAL; SILICON COMPOUNDS; VARACTORS;

DOUBLE EPI; HIGH VOLTAGE NPN; HIGH VOLTAGE TRANSISTORS;

TRANSISTORS;

EID: 39049099361     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/BIPOL.2006.311159     Document Type: Conference Paper

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